Description

Manufacturer: FEI Year: 2009 Condition: Used System Status: Complete System Current Status: Warehoused Deinstallation: Deinstalled by FEI Location: USA Specifications Spatial Resolution: 3–4 nm under optimal conditions Accelerating Voltage: 0.5–30 kV Working Distance: 5–13 mm High-Resolution Mode Beam Current: Up to 10 nA Analytical Mode Beam Current: Up to 22 nA Stage: 5-Axis Motorized Stage (X, Y, Z, Tilt, Rotation) Low Vacuum Capability: < 0.1 Torr Deceleration Mode: Supports operation at 2 kV accelerating voltage Chamber Camera: IR-CCD Camera Detectors & Analytical Configuration Everhart-Thornley Detector: Secondary Electron (SE) Imaging Solid-State BSED: Backscattered Electron Detection in High Vacuum In-Lens TLD SE Detector In-Lens TLD BSE Detector Helix Detector: Ultra-High-Resolution Low-Vacuum SE Imaging LVD: Low-Vacuum Secondary Electron Detector Gatan Chroma CL Detector: 400–800 nm EDS: Dual Bruker 30 mm² Detectors EDS Capability: X-Ray Elemental Mapping Key Features High-Resolution SEM Imaging Dual EDS Elemental Analysis EDS X-Ray Mapping High and Low Vacuum Operation Secondary and Backscattered Electron Imaging Cathodoluminescence Detection Motorized 5-Axis Sample Positioning Low-Voltage Imaging Deceleration Mode In-Chamber IR-CCD Viewing Description This 2009 FEI high-resolution scanning electron microscope is a complete analytical SEM system configured for advanced imaging and elemental characterization. The system provides spatial resolution of approximately 3–4 nm under optimal conditions and supports accelerating voltages from 0.5 to 30 kV. Multiple SE and BSE detectors provide flexible imaging in both high-vacuum and low-vacuum operating modes. Dual Bruker 30 mm² EDS detectors provide elemental analysis and X-ray mapping capabilities. The system also includes a Gatan Chroma cathodoluminescence detector covering wavelengths from 400 to 800 nm. A motorized five-axis stage, low-vacuum capability, deceleration mode, and IR-CCD chamber camera provide additional flexibility for materials characterization, semiconductor inspection, failure analysis, geological samples, and research applications.