Description

FSM 413 MOT (DP) FSM 413 MOT Wafer Thickness Measurement System Desktop System with Automatic X-Y Stage Non Contact Wafer Thickness Metrology for ultra thin backgrind or chemically etched wafers, Measures patterned, bumped wafers on tapes or bonded on carriers, for stacked die and MEMS Applications The FSM 413 Echoprobe TM sensor uses a patented infrared (IR) interferometry technique that provides a direct and accurate substrate thickness and total thick- ness variation (TTV) measurement of thick to ultra-thin wafers. Configured as a Single Probe system, several materials transparent to the IR beam, such as Si, GaAs, InP, SiC, Glass, Quartz and many polymers, are readily measured. Sub- strate thickness of conventional wafers with patterns, tapes, bumps or bonded wafers mounted on carriers can be determined with high precision and accuracy. When configured as a Dual Probe system, the FSM413 also provides measure- ments of the total thickness of the wafer, including substrate thickness and the patterned height thickness in cases the beam cannot penetrate through the materi- al. Options are available to measure trench depth and via holes, including high aspect ratio trenches and vias in MEMS type applications. Various specialized MEMS applications including membrane metrology and Bump Height metrology are also optionally available. APPLICATION: Thickness Measurements of Bonded Wafers: Si-Glass, Si-Si, Si-Tape, Si-epoxy GaAs, InP, Sapphire, Quartz Trench Depth Measurements: High Aspect Ratio Trench in MEMS Surface Roughness Measurements: Backgrind, Etched, Polished wafers Bump height (option) TSV depth and width (option)