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Description

Wafer size : 12 inch Resolution : ≦2nm Static measurement repeatability(3σ) : 0.6nm Dynamic measurement repeatability(3σ) : 1.7nm Throughput : 33(20point) Stage stop position accuracy : ±1um Accelerating voltage : 300 ~ 1600V Measurement range : 0.050 ~ 2.0um Image process : VIPS200 Missing/Defect parts ・IP power supply 1ea ・Stage laser excel board 1ea ・Turbo pump 2ea

Specifications

Category
Semiconductor & Electronics
Condition
USED
Location
Asia
Listed
1 month ago
Views
18

HITACHI S-9380 CD-SEM

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Asia
O

oll309688

Identity revealed after deal is confirmed

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